Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

RS Stock No.:: 796-5055
Mfr. Part No.:: GT20J341
Manufacturer:: Toshiba

Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

This image is representative of the product range

36 In Global stock for delivery. NCR Plus within 10 working day(s), rest of PH within 14 working days

166 In Global stock for delivery. NCR Plus within 10 working day(s), rest of PH within 14 working days

Price Each

PHP149.36

(exc. VAT)

PHP167.28

(inc. VAT)

Units	Per Unit
1 - 9	PHP149.36
10 - 49	PHP144.89
50 - 99	PHP140.53
100 - 249	PHP136.32
250 +	PHP132.24

RS Stock No.:: 796-5055
Mfr. Part No.:: GT20J341
Manufacturer:: Toshiba

Technical data sheets

Legislation and Compliance

Product Details

IGBT Discretes, Toshiba

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	20 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±25V
Maximum Power Dissipation	45 W
Package Type	TO-220SIS
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	100kHz
Transistor Configuration	Single
Dimensions	10 x 4.5 x 15mm
Maximum Operating Temperature	+150 °C