STMicroelectronics, Type N-Channel IGBT, 7 A 600 V, 3-Pin TO-220FP, Through Hole

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Subtotal 25 units (supplied in a tube)*

PHP2,415.70

(exc. VAT)

PHP2,705.575

(inc. VAT)

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  • Plus 35 unit(s) shipping from August 03, 2026
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Units
Per Unit
25 - 45PHP96.628
50 - 245PHP94.696
250 - 495PHP92.802
500 +PHP90.946

*price indicative

Packaging Options:
RS Stock No.:
795-8981P
Mfr. Part No.:
STGF6NC60HD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

7A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

56W

Package Type

TO-220FP

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Maximum Operating Temperature

150°C

Series

Powermesh

Height

16.4mm

Length

10.4mm

Standards/Approvals

JEDEC JESD97

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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