STMicroelectronics, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface

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Subtotal 25 units (supplied on a continuous strip)*

PHP3,044.45

(exc. VAT)

PHP3,409.775

(inc. VAT)

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Units
Per Unit
25 - 45PHP121.778
50 - 245PHP118.13
250 - 495PHP114.586
500 +PHP111.15

*price indicative

Packaging Options:
RS Stock No.:
795-8975P
Mfr. Part No.:
STGB10NC60KDT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

20A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

65W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

4.6mm

Length

10.4mm

Series

STGx10NC60KD

Standards/Approvals

RoHS

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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