STMicroelectronics STGW60H65FB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 792-5811P
- Mfr. Part No.:
- STGW60H65FB
- Manufacturer:
- STMicroelectronics
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Subtotal 10 units (supplied in a tube)*
PHP3,035.10
(exc. VAT)
PHP3,399.30
(inc. VAT)
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Units | Per Unit |
|---|---|
| 10 - 19 | PHP303.51 |
| 20 - 49 | PHP296.99 |
| 50 + | PHP290.45 |
*price indicative
- RS Stock No.:
- 792-5811P
- Mfr. Part No.:
- STGW60H65FB
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 375 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.75 x 5.15 x 20.15mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 375 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.75 x 5.15 x 20.15mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.