Fuji Electric FGW40N120VD IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal 10 units (supplied in a tube)*

PHP4,574.60

(exc. VAT)

PHP5,123.60

(inc. VAT)

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Units
Per Unit
10 - 49PHP457.46
50 - 99PHP437.47
100 - 249PHP389.26
250 +PHP365.15

*price indicative

Packaging Options:
RS Stock No.:
772-9051P
Mfr. Part No.:
FGW40N120VD
Manufacturer:
Fuji Electric
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Brand

Fuji Electric

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

340 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 5.03 x 20.95mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

IGBT Discretes, Fuji Electric



IGBT Discretes & Modules, Fuji Electric


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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