Fuji Electric 1MBi900V-120-50 Single IGBT Module, 900 A 1200 V, 4-Pin M153, Panel Mount

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
HH Series, Planar-NPT High-Speed Chooper IGBTs

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.