Vishay VS-GT200TS065S, Type N-Channel Half Bridge IGBT, 476 A 650 V, 7-Pin INT-A-PAK, Panel
- RS Stock No.:
- 276-6409
- Mfr. Part No.:
- VS-GT200TS065S
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP8,781.42
(exc. VAT)
PHP9,835.19
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 13 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 4 | PHP8,781.42 |
| 5 - 9 | PHP8,367.20 |
| 10 + | PHP7,870.14 |
*price indicative
- RS Stock No.:
- 276-6409
- Mfr. Part No.:
- VS-GT200TS065S
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 476A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 1kW | |
| Number of Transistors | 2 | |
| Package Type | INT-A-PAK | |
| Configuration | Half Bridge | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 7 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.09V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 3 mm | |
| Length | 94.4mm | |
| Height | 3mm | |
| Standards/Approvals | UL E78996 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 476A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 1kW | ||
Number of Transistors 2 | ||
Package Type INT-A-PAK | ||
Configuration Half Bridge | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 7 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.09V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 3 mm | ||
Length 94.4mm | ||
Height 3mm | ||
Standards/Approvals UL E78996 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IT
The Vishay IGBT features Gen 4 FRED Pt technology anti parallel diodes with ultra soft reverse recovery characteristics. It is optimized for high current inverter stages (AC TIG welding machines).
UL approved
Very low conduction losses
Low EMI
Related links
- Vishay VS-GT200TS065S 476 A 650 V Panel
- Vishay VS-GT100TS065N 96 A 650 V Panel
- Vishay VS-GT150TS065S 372 A 650 V Panel
- Vishay VS-GT200TS065N 193 A 650 V Panel
- Vishay VS-GT100TS065S 247 A 650 V Panel
- Infineon FS03MR12A7MA2BHPSA1 310 A 1200 V HybridPACK Drive G2, Screw
- onsemi NXH800H120L7QDSG Type P-Channel Half Bridge IGBT Power Module 11-Pin PIM11, Through Hole
- Infineon FF2400R12IP7PBPSA1 2400 A 1200 V Module, Screw
