Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount

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Subtotal (1 unit)*

PHP6,909.07

(exc. VAT)

PHP7,738.16

(inc. VAT)

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  • Shipping from December 06, 2027
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Units
Per Unit
1 - 4PHP6,909.07
5 - 9PHP6,652.04
10 - 49PHP6,393.57
50 +PHP6,266.51

*price indicative

Packaging Options:
RS Stock No.:
260-8888
Mfr. Part No.:
FF50R12RT4HOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Maximum Power Dissipation

285 W

Configuration

Dual

Package Type

AG-34MM

Mounting Type

Chassis Mount

The infineon dual IGBT module is 34 mm 1200 V, 50 A fast TRENCHSTOP IGBT4 and emitter controlled 4 diode. VCEsat with positive temperature coefficient, it is flexibility, optimal electrical performance and highest reliability.

Extended operation temperature
Low switching losses
Low VCEsat
Isolated base plate
Standard housing

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