Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

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Subtotal (1 pack of 2 units)*

PHP486.29

(exc. VAT)

PHP544.644

(inc. VAT)

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  • 1,102 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 8PHP243.145PHP486.29
10 - 48PHP218.385PHP436.77
50 - 98PHP206.40PHP412.80
100 - 248PHP179.56PHP359.12
250 +PHP175.91PHP351.82

*price indicative

Packaging Options:
RS Stock No.:
253-3509
Mfr. Part No.:
BIDW50N65T
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

416 W

Package Type

TO-247

Configuration

Single Diode

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).

650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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