Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
- RS Stock No.:
- 253-3508
- Mfr. Part No.:
- BIDW50N65T
- Manufacturer:
- Bourns
600 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each (In a Tube of 600)
PHP182.128
(exc. VAT)
PHP203.983
(inc. VAT)
| Units | Per Unit | Per Tube* |
| 600 + | PHP182.128 | PHP109,276.80 |
| *price indicative | ||
- RS Stock No.:
- 253-3508
- Mfr. Part No.:
- BIDW50N65T
- Manufacturer:
- Bourns
Technical data sheets
Legislation and Compliance
Product Details
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).
650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 416 W |
| Configuration | Single Diode |
| Package Type | TO-247 |