STMicroelectronics STGH30H65DFB-2AG IGBT, 30 A 650 V H2PAK-2, Through Hole

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PHP230.06

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1 - 9PHP205.41
10 - 99PHP185.14
100 - 249PHP166.22
250 - 499PHP149.98
500 +PHP134.45

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Packaging Options:
RS Stock No.:
248-4894
Mfr. Part No.:
STGH30H65DFB-2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

260W

Package Type

H2PAK-2

Mount Type

Through Hole

Maximum Collector Emitter Saturation Voltage VceSAT

1.55V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

STGH30H65DFB

Height

4.7mm

Length

10.4mm

Automotive Standard

AEC-Q101

The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCEsat temperature coefficient and very tight parameter distribution result in safer paralleling operation.

AEC-Q101 qualified

High speed switching series

Safer paralleling

Tight parameter distribution

Low thermal resistance

Soft and very fast recovery antiparallel diode

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