onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

PHP4,970.56

(exc. VAT)

PHP5,567.03

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 22 unit(s), ready to ship from another location
Units
Per Unit
1 - 1PHP4,970.56
2 - 3PHP4,885.81
4 - 7PHP4,809.53
8 - 11PHP4,724.78
12 +PHP4,640.04

*price indicative

Packaging Options:
RS Stock No.:
245-6962
Mfr. Part No.:
NXH100B120H3Q0PG
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Maximum Continuous Collector Current

61 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Maximum Power Dissipation

186 W

Package Type

Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins

The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with Pre applied thermal interface Material and without pre applied TIM

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links