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Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

RS Stock No.:: 244-5835
Mfr. Part No.:: FP50R12KE3BOSA1
Manufacturer:: Infineon

Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

Bulk discount available

Subtotal (1 unit)*

PHP6,188.18

(exc. VAT)

PHP6,930.76

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

10 unit(s) shipping from August 05, 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit
1 - 1	PHP6,188.18
2 - 2	PHP6,064.53
3 - 3	PHP5,943.26
4 - 4	PHP5,824.36
5 +	PHP5,707.84

*price indicative

RS Stock No.:: 244-5835
Mfr. Part No.:: FP50R12KE3BOSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	75 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	280 W
	Number of Transistors	7

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 75 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 280 W
	Number of Transistors 7

Datasheet - FP50R12KE3BOSA1

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 280 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.30 V
Gate-emitter leakage current 400 nA

Infineon FP50R12KE3BOSA1 IGBT Module, 75 A 1200 V

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