Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V

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Subtotal (1 tray of 10 units)*

PHP67,643.50

(exc. VAT)

PHP75,760.70

(inc. VAT)

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Units
Per Unit
Per Tray*
10 - 10PHP6,764.35PHP67,643.50
20 - 20PHP6,629.127PHP66,291.27
30 +PHP6,496.533PHP64,965.33

*price indicative

RS Stock No.:
244-5822
Mfr. Part No.:
FF300R12KT4HOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

450 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1.6 kW

Number of Transistors

2

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 1600 W, maximum gate threshold voltage is 6.4 V.

Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA

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