Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V
- RS Stock No.:
- 244-5817
- Mfr. Part No.:
- FD150R12RT4HOSA1
- Manufacturer:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 244-5817
- Mfr. Part No.:
- FD150R12RT4HOSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 790 W | |
| Number of Transistors | 1 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 790 W | ||
Number of Transistors 1 | ||
The infineon IGBT modules with fast trench/fieldstop IGBT4 and emitter controlled 4 diode are the right choice for your design it is suitable for typical applications like high frequency switching applications motor drives, UPS systems.
Electrical features
Extended operation temperature Tvj op
Low switching losses
Low VCEsat
Tvj op = 150° C
VCEsat with positive temperature coefficient
Mechanical features
Isolated base plate
Standard housing
Extended operation temperature Tvj op
Low switching losses
Low VCEsat
Tvj op = 150° C
VCEsat with positive temperature coefficient
Mechanical features
Isolated base plate
Standard housing