STMicroelectronics STGYA50H120DF2 Series IGBT, 50 A 1200 V Max247 long leads

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Subtotal (1 tube of 30 units)*

PHP14,360.22

(exc. VAT)

PHP16,083.45

(inc. VAT)

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Units
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Per Tube*
30 - 30PHP478.674PHP14,360.22
60 - 60PHP464.314PHP13,929.42
90 +PHP450.385PHP13,511.55

*price indicative

RS Stock No.:
244-3194
Mfr. Part No.:
STGYA50H120DF2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

535 W

Package Type

Max247 long leads

Configuration

Series

The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C
5 μs of short-circuit withstand time
Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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