Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130
- RS Stock No.:
- 236-5199P
- Mfr. Part No.:
- FZ825R33HE4DBPSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal 2 units (supplied in a tray)*
PHP170,630.50
(exc. VAT)
PHP191,106.16
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 3 unit(s) ready to ship from another location
- Plus 2 unit(s) shipping from December 22, 2025
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Units | Per Unit |
|---|---|
| 2 + | PHP85,315.25 |
*price indicative
- RS Stock No.:
- 236-5199P
- Mfr. Part No.:
- FZ825R33HE4DBPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 825 A | |
| Maximum Collector Emitter Voltage | 3300 V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 2400 kW | |
| Package Type | AG-IHVB130 | |
| Configuration | Single | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 825 A | ||
Maximum Collector Emitter Voltage 3300 V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 2400 kW | ||
Package Type AG-IHVB130 | ||
Configuration Single | ||
The Infineon single switch IGBT Module is with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. This module has high power density and AlSiC base plate for increased thermal cycling capability.
VCES is 3300 V
IC nom is 825 A
ICRM is 1650 A
It retains high current density
IC nom is 825 A
ICRM is 1650 A
It retains high current density