Infineon IGB50N65S5ATMA1, Type N-Channel IGBT, 80 A 650 V, 3-Pin PG-TO-263, Surface
- RS Stock No.:
- 226-6063
- Mfr. Part No.:
- IGB50N65S5ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 pack of 5 units)*
PHP899.18
(exc. VAT)
PHP1,007.08
(inc. VAT)
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In Stock
- 1,000 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 + | PHP179.836 | PHP899.18 |
*price indicative
- RS Stock No.:
- 226-6063
- Mfr. Part No.:
- IGB50N65S5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 270W | |
| Package Type | PG-TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 270W | ||
Package Type PG-TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series TrenchStop | ||
Automotive Standard No | ||
The Infineon IGB50N65S is 50 A IGBT with anti-parallel diode with no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.
Very low VCEsat of 1.35 V at 25°C
Maximum junction temperature Tvj 175°C
four times nominal current
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