Infineon IKD15N60RATMA1 IGBT, 30 A 600 V, 3-Pin PG-TO252-3
- RS Stock No.:
- 215-6656
- Mfr. Part No.:
- IKD15N60RATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 2500 units)*
PHP110,697.50
(exc. VAT)
PHP123,980.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 2,500 unit(s) shipping from December 25, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP44.279 | PHP110,697.50 |
| 5000 - 5000 | PHP42.508 | PHP106,270.00 |
| 7500 + | PHP41.403 | PHP103,507.50 |
*price indicative
- RS Stock No.:
- 215-6656
- Mfr. Part No.:
- IKD15N60RATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 250 W | |
| Package Type | PG-TO252-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 250 W | ||
Package Type PG-TO252-3 | ||
Pin Count 3 | ||
The Infineon insulated-gate bipolar transistor with integrated diode in packages offering space saving advantage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
Related links
- Infineon IKD15N60RATMA1 IGBT 3-Pin PG-TO252-3
- Infineon IKD15N60RFATMA1 Single IGBT 3-Pin PG-TO252
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 3-Pin PG-TO252-3 IPD040N03LF2SATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 3-Pin PG-TO252-3 IPD023N03LF2SATMA1
- Infineon OptiMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R1K0PFD7SAUMA1
- Infineon SPD04P10PL G Type P-Channel MOSFET 100 V Enhancement, 3-Pin PG-TO252-3
- Infineon SPD18P06P G Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
