- RS Stock No.:
- 168-7104
- Mfr. Part No.:
- STGWT30V60F
- Manufacturer:
- STMicroelectronics
Available for back order.
Added
Price Each (In a Tube of 30)
PHP128.162
(exc. VAT)
PHP143.541
(inc. VAT)
Units | Per Unit | Per Tube* |
30 + | PHP128.162 | PHP3,844.86 |
*price indicative |
- RS Stock No.:
- 168-7104
- Mfr. Part No.:
- STGWT30V60F
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- KR
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 60 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 260 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.8 x 5 x 20.1mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |