Infineon IKW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 124-8809
- Mfr. Part No.:
- IKW30N60TFKSA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 05/05/2025, delivery within 10 working days from desptach date
Added
Price Each (In a Tube of 30)
PHP214.92
(exc. VAT)
PHP240.71
(inc. VAT)
| Units | Per Unit | Per Tube* |
| 30 - 30 | PHP214.92 | PHP6,447.60 |
| 60 - 120 | PHP208.473 | PHP6,254.19 |
| 150 - 270 | PHP202.219 | PHP6,066.57 |
| 300 + | PHP196.152 | PHP5,884.56 |
| *price indicative | ||
- RS Stock No.:
- 124-8809
- Mfr. Part No.:
- IKW30N60TFKSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 45 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 187 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.13 x 5.21 x 21.1mm |
| Maximum Operating Temperature | +175 °C |
| Energy Rating | 2.1mJ |
| Gate Capacitance | 1630pF |
| Minimum Operating Temperature | -40 °C |