onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 124-1446
- Mfr. Part No.:
- FGH40T120SMD
- Manufacturer:
- onsemi
420 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each (In a Tube of 30)
PHP345.744
(exc. VAT)
PHP387.233
(inc. VAT)
| Units | Per Unit | Per Tube* |
| 30 - 30 | PHP345.744 | PHP10,372.32 |
| 60 - 120 | PHP335.372 | PHP10,061.16 |
| 150 - 270 | PHP325.311 | PHP9,759.33 |
| 300 - 570 | PHP315.552 | PHP9,466.56 |
| 600 + | PHP306.085 | PHP9,182.55 |
| *price indicative | ||
- RS Stock No.:
- 124-1446
- Mfr. Part No.:
- FGH40T120SMD
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 555 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.87 x 4.82 x 20.82mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |