onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

RS Stock No.:: 124-1320
Mfr. Part No.:: FGH60N60SMD
Manufacturer:: onsemi

onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

This image is representative of the product range

Temporarily out of stock - back order for despatch 05/03/2025, delivery within 10 working days from desptach date

Added

Price Each (In a Tube of 30)

PHP245.88

(exc. VAT)

PHP275.39

(inc. VAT)

Units	Per Unit	Per Tube*
30 - 30	PHP245.88	PHP7,376.40
60 - 120	PHP240.962	PHP7,228.86
150 - 270	PHP236.143	PHP7,084.29
300 - 570	PHP231.42	PHP6,942.60
600 +	PHP226.792	PHP6,803.76
*price indicative

RS Stock No.:: 124-1320
Mfr. Part No.:: FGH60N60SMD
Manufacturer:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Discrete IGBTs, Fairchild Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	120 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	600 W
Package Type	TO-247AB
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	15.6 x 4.7 x 20.6mm
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+175 °C