Infineon IGW40N65F5FKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 110-7425
- Mfr. Part No.:
- IGW40N65F5FKSA1
- Brand:
- Infineon
Image representative of range
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Subtotal (1 pack of 4 units)*
PHP942.372
(exc. VAT)
PHP1,055.456
(inc. VAT)
FREE delivery for orders over ₱3,000.00
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- Shipping from May 04, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 4 | PHP235.593 | PHP942.37 |
| 8 - 36 | PHP228.525 | PHP914.10 |
| 40 - 76 | PHP221.67 | PHP886.68 |
| 80 - 196 | PHP215.02 | PHP860.08 |
| 200 + | PHP208.568 | PHP834.27 |
*price indicative
- RS Stock No.:
- 110-7425
- Mfr. Part No.:
- IGW40N65F5FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 250 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 2500pF | |
| Energy Rating | 0.46mJ | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 250 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 2500pF | ||
Energy Rating 0.46mJ | ||
Minimum Operating Temperature -40 °C | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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