STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface Mount

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Subtotal 10 units (supplied on a continuous strip)*

PHP2,132.40

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PHP2,388.30

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10 - 99PHP213.24
100 +PHP196.14

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Packaging Options:
RS Stock No.:
285-638P
Mfr. Part No.:
STGHU30M65DF2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

84 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

441 W

Number of Transistors

1

Configuration

Dual Gate

Package Type

HU3PAK

Mounting Type

Surface Mount

Pin Count

7

This STMicroelectronics device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C
6 μs of minimum short circuit withstand time
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Excellent switching performance thanks to the extra driving kelvin pin