ON Semiconductor NXH35C120L2C2ESG, DIP26 , N-Channel 3 Phase IGBT Module, 35 A max, 650 V, Through Hole

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The ON Semiconductor transfer molded power module with low thermal resistance substrate containing a converter-inverter-brake circuit consisting of six 35 Ampere and 1600 Volts rectifiers, six 35 Ampere and 1200 Volts IGBTs with inverse diodes, one 35 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.

Low thermal resistance
6mm clearance distance between pin to heatsink
Solderable pins
Pb free
Halogen free or BFR free
RoHS compliant

Attribute Value
Configuration 3 Phase
Maximum Continuous Collector Current 35 A
Maximum Collector Emitter Voltage 650 V
Number of Transistors 6
Maximum Gate Emitter Voltage ±20.0V
Channel Type N
Mounting Type Through Hole
Package Type DIP26
Temporarily out of stock - back order for despatch 13/01/2021, delivery within 6 working days from desptach date
Price Each
PHP 2,729.45
(exc. VAT)
PHP 3,056.98
(inc. VAT)
Per Unit
1 +