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MPN

IXYS MUBW50-06A7, , N-Channel 3 Phase Bridge IGBT Module, 75 A max, 600 V, PCB Mount

This image is representative of the product range


24 In stock for delivery within 6 working days
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Price Each

PHP3,514.14

(exc. VAT)

PHP3,935.84

(inc. VAT)

units

Added

RS Stock No.:
194-580
Mfr. Part No.:
MUBW50-06A7
Manufacturer:
IXYS
unitsPer Unit
1 - 9PHP3,514.14
10 - 49PHP3,396.76
50 - 99PHP3,323.46
100 - 249PHP3,290.61
250 +PHP3,258.05

IGBT Modules, IXYS


IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

AttributeValue
Transistor Configuration3 Phase
Configuration3 Phase Bridge
Maximum Continuous Collector Current75 A
Maximum Collector Emitter Voltage600 V
Maximum Gate Emitter Voltage±20V
Channel TypeN
Mounting TypePCB Mount
Pin Count23
Dimensions107.5 x 45 x 17mm
Height17mm
Length107.5mm
Maximum Operating Temperature+125 °C
Width45mm
Minimum Operating Temperature-40 °C