JFETs

A JFET is a four-terminal device, the terminals are called the gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs and N-Channel P-Channel. FET stands for junction field-effect transistor. They can also be referred to as a JUGFET

N-Channel JFET Construction

The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

P-Channel JFET Construction

The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

Features and Benefits

  • High input impedance
  • Voltage-controlled device
  • A high degree of isolation between the input and the output
  • Less noise

What are JFET transistors used for?

JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.

What is the difference between a JFET and BJT (Bipolar Junction Transistor)?

The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carriers flow.

What is the doping of semiconductors?

Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.


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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 112-5510
Mfr. Part No.PMBFJ177,215
BrandNXP
PHP26.24
Each (In a Pack of 5)
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P 1.5 to 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS Stock No. 103-8162
Mfr. Part No.PMBFJ177,215
BrandNXP
PHP8.546
Each (On a Reel of 3000)
units
P 1.5 to 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 626-2311
Mfr. Part No.BF513,215
BrandNXP
PHP32.823
Each (In a Pack of 10)
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N 10 to 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 166-0536
Mfr. Part No.BF513,215
BrandNXP
PHP21.147
Each (On a Reel of 3000)
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N 10 to 18mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 626-3314
Mfr. Part No.PMBFJ309,215
BrandNXP
PHP18.47
Each (In a Pack of 10)
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N 12 to 30mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 179-1061
Mfr. Part No.PMBFJ309,215
BrandNXP
PHP8.537
Each (On a Reel of 3000)
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N 12 to 30mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 166-0535
Mfr. Part No.BF510,215
BrandNXP
PHP24.906
Each (On a Reel of 3000)
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N 0.7 to 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 626-2412
Mfr. Part No.BF861C,215
BrandNXP
PHP36.251
Each (In a Pack of 10)
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N 12 to 25mA 25 V +25 V 25V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm