IGBT Modules

An IGBT module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFET. They are highly efficient and fast switching plus they have high current and low saturation voltage characteristics.

IGBT transistors are a three-terminal semiconductor device used as a switching element in power converters and variable speed drives to stop or allow power flow. IGBT transistors are controlled by a metal oxide semiconductor gate structure.

IGBT modules are widely used for switching electrical power in applications such as inverters, welding, motors, power conditioners, trains and uninterruptible power supplies.

A high-speed IGBT module is a product suitable for applications with switching frequencies between 20k and 50 kHz such as power supplies for medical equipment, welding machines, and induction heating. They include a boost chopper module and a half-bridge module.

IGBT modules have different configurations such as dual, 3-level, booster, common emitter, single switch, six-pack, chopper, PIM, PIM three-phase input rectifier, twelve pack, four pack and diode.

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Description Price Configuration Transistor Configuration Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Number of Transistors Mounting Type Package Type Pin Count Switching Speed Maximum Power Dissipation Dimensions Height Length
RS Stock No. 165-5707
Mfr. Part No.BSM150GB60DLCHOSA1
BrandInfineon
PHP4,086.08
Each (In a Tray of 10)
units
Series Series 180 A 600 V ±20V - Panel Mount 34MM Module 7 1MHz 595 W 94 x 34 x 30.5mm 30.5mm 94mm
RS Stock No. 168-4476
Mfr. Part No.MKI50-06A7
BrandIXYS
PHP2,814.90
Each (In a Box of 6)
units
Bridge Full Bridge 72 A 600 V ±20V - PCB Mount E 2 12 - - 107.5 x 45 x 17mm 17mm 107.5mm
RS Stock No. 752-8170
Mfr. Part No.BSM200GA120DN2HOSA1
BrandInfineon
PHP7,260.75
Each
units
Single Single 300 A 1200 V ±20V - Panel Mount 62MM Module 5 - 1.55 kW 106.4 x 61.4 x 36.5mm 36.5mm 106.4mm
RS Stock No. 168-4550
Mfr. Part No.2MBI100VA-060-50
PHP3,307.30
Each (In a Box of 10)
units
Series Series 100 A 600 V ±20V - Surface Mount M263 7 - 650 W 94 x 34 x 30mm 30mm 94mm
RS Stock No. 125-1113
Mfr. Part No.SKM300GB12E4
BrandSemikron
PHP11,978.95
Each
units
Dual Half Bridge 422 A 1200 V 20V 2 Screw Mount SEMITRANS3 7 12kHz - 106.4 x 61.4 x 30.5mm 30.5mm 106.4mm
RS Stock No. 110-9124
Mfr. Part No.2MBI100VA-060-50
PHP2,549.27
Each
units
Series Series 100 A 600 V ±20V - Surface Mount M263 7 - 650 W 94 x 34 x 30mm 30mm 94mm
RS Stock No. 905-6172
Mfr. Part No.SKM100GB176D
BrandSemikron
PHP3,776.19
Each
units
Dual Half Bridge Series 125 A 1700 V ±20V - Panel Mount SEMITRANS2 7 - - 94 x 34 x 30.5mm 30.5mm 94mm
RS Stock No. 170-8678
Mfr. Part No.STGIB15CH60TS-L
PHP703.50
Each (In a Tube of 13)
units
Array 3 Phase 20 A 600 V - - Through Hole SDIP2B 26 - 81 W 38 x 24 x 3.5mm 3.5mm 38mm
RS Stock No. 917-3380
Mfr. Part No.STGIB15CH60TS-L
PHP692.98
Each
units
Array 3 Phase 20 A 600 V - - Through Hole SDIP2B 26 - 81 W 38 x 24 x 3.5mm 3.5mm 38mm
RS Stock No. 687-4961
Mfr. Part No.SKM75GB12T4
BrandSemikron
PHP3,562.20
Each
units
Dual Half Bridge Series 115 A 1200 V ±20V - Panel Mount SEMITRANS2 7 - - 94 x 34 x 30.1mm 30.1mm 94mm
RS Stock No. 462-912
Mfr. Part No.6MBP50RA-060-55
PHP4,403.65
Each
units
3 Phase 3 Phase 50 A 600 V - - PCB Mount P 610 22 - 198 W 109 x 88 x 22mm 22mm 109mm
RS Stock No. 194-394
Mfr. Part No.MID200-12A4
BrandIXYS
PHP5,418.00
Each
units
Single Single 270 A 1200 V ±20V - Panel Mount Y3 DCB 5 - - 110 x 62 x 30mm 30mm 110mm
RS Stock No. 747-1119
Mfr. Part No.1MBi200U4H-120L-50
PHP7,906.93
Each
units
Single Single 200 A 1200 V ±20V - Panel Mount M259 7 - 1.04 kW 108 x 62 x 30mm 30mm 108mm
RS Stock No. 166-0844
Mfr. Part No.FS50R12KE3BOSA1
BrandInfineon
PHP3,977.93
Each (In a Tray of 10)
units
3 Phase Bridge 3 Phase 75 A 1200 V ±20V - Panel Mount AG-ECONO2-6 - - 270 W 93 x 45 x 17mm 17mm 93mm
RS Stock No. 168-4641
Mfr. Part No.1MBI200U4H-120L-50
PHP11,031.00
Each (In a Box of 10)
units
Single Single 200 A 1200 V ±20V - Panel Mount M259 7 - 1.04 kW 108 x 62 x 30mm 30mm 108mm
RS Stock No. 166-0895
Mfr. Part No.FP75R12KE3BOSA1
BrandInfineon
PHP10,624.32
Each (In a Tray of 10)
units
3 Phase Bridge 3 Phase 105 A 1200 V ±20V - Panel Mount AG-ECONO3-3 - - 355 W 122 x 62 x 17mm 17mm 122mm
RS Stock No. 146-1696
Mfr. Part No.MID200-12A4
BrandIXYS
PHP4,330.965
Each (In a Box of 2)
units
Single Single 270 A 1200 V ±20V - Panel Mount Y3 DCB 5 - - 110 x 62 x 30mm 30mm 110mm
RS Stock No. 111-6094
Mfr. Part No.FS50R12KE3BOSA1
BrandInfineon
PHP4,130.37
Each
units
3 Phase Bridge 3 Phase 75 A 1200 V ±20V - Panel Mount AG-ECONO2-6 - - 270 W 93 x 45 x 17mm 17mm 93mm
RS Stock No. 111-6095
Mfr. Part No.FP75R12KE3BOSA1
BrandInfineon
PHP7,981.58
Each
units
3 Phase Bridge 3 Phase 105 A 1200 V ±20V - Panel Mount AG-ECONO3-3 - - 355 W 122 x 62 x 17mm 17mm 122mm
RS Stock No. 125-1116
Mfr. Part No.SKM100GB063D
BrandSemikron
PHP3,822.00
Each
units
Dual Half Bridge 130 A 600 V 20V 2 Screw Mount SEMITRANS2 7 - - 94 x 34 x 30.5mm 30.5mm 94mm
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...