N-Channel MOSFET, 1.5 A, 18 V, 3-Pin SOT-89 STMicroelectronics PD84001

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 1.5 A
Maximum Drain Source Voltage 18 V
Package Type SOT-89
Mounting Type Surface Mount
Pin Count 3
Channel Mode Enhancement
Maximum Power Dissipation 6 W
Transistor Configuration Single
Maximum Gate Source Voltage -0.5 V, +15 V
Number of Elements per Chip 1
Height 1.6mm
Length 4.6mm
Maximum Operating Temperature +150 °C
Transistor Material Si
Width 2.6mm
3815 In Global stock for delivery within 4 - 8 working days
Price Each (In a Pack of 5)
Was PHP121.676
PHP 112.22
(exc. VAT)
PHP 125.69
(inc. VAT)
units
Per Unit
Per Pack*
5 - 45
PHP112.22
PHP561.10
50 - 245
PHP101.926
PHP509.63
250 - 995
PHP86.052
PHP430.26
1000 - 2495
PHP78.586
PHP392.93
2500 +
PHP70.178
PHP350.89
*price indicative
Packaging Options:
Related Products
The Radio Frequency Transistors are LDMOS suitable for ...
Description:
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
The Radio Frequency Transistors are LDMOS suitable for ...
Description:
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
The Radio Frequency Transistors are LDMOS suitable for ...
Description:
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
The Radio Frequency Transistors are LDMOS suitable for ...
Description:
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.