- RS Stock No.:
- 906-4356
- Mfr. Part No.:
- IPT020N10N3ATMA1
- Manufacturer:
- Infineon
3988 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Price Each (In a Pack of 2)
PHP447.12
(exc. VAT)
PHP500.77
(inc. VAT)
units | Per Unit | Per Pack* |
2 - 8 | PHP447.12 | PHP894.24 |
10 - 48 | PHP433.71 | PHP867.42 |
50 - 98 | PHP420.695 | PHP841.39 |
100 - 248 | PHP408.07 | PHP816.14 |
250 + | PHP395.83 | PHP791.66 |
*price indicative |
- RS Stock No.:
- 906-4356
- Mfr. Part No.:
- IPT020N10N3ATMA1
- Manufacturer:
- Infineon
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 300 A |
Maximum Drain Source Voltage | 100 V |
Package Type | HSOF-8 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 3.7 mΩ |
Channel Mode | Enhancement |
Maximum Power Dissipation | 375 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Length | 10.58mm |
Typical Gate Charge @ Vgs | 156 nC @ 10 V |
Width | 10.1mm |
Maximum Operating Temperature | +175 °C |
Series | OptiMOS 3 |
Forward Diode Voltage | 1V |
Height | 2.4mm |
Minimum Operating Temperature | -55 °C |