N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK Texas Instruments CSD19536KTTT
- RS Stock No.:
- 900-9857P
- Mfr. Part No.:
- CSD19536KTTT
- Manufacturer:
- Texas Instruments
536 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
PHP307.51
(exc. VAT)
PHP344.41
(inc. VAT)
| Units | Per Unit |
| 10 - 49 | PHP307.51 |
| 50 - 99 | PHP298.28 |
| 100 + | PHP289.33 |
- RS Stock No.:
- 900-9857P
- Mfr. Part No.:
- CSD19536KTTT
- Manufacturer:
- Texas Instruments
Technical data sheets
Legislation and Compliance
Product Details
N-Channel NexFET™ Power MOSFET, Texas Instruments
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Texas Instruments
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 272 A |
| Maximum Drain Source Voltage | 100 V |
| Series | NexFET |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Length | 10.67mm |
| Typical Gate Charge @ Vgs | 118 nC @ 0 V |
| Width | 9.65mm |
| Transistor Material | Si |
| Forward Diode Voltage | 1.1V |
| Height | 4.83mm |
| Minimum Operating Temperature | -55 °C |