N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

RS Stock No.:: 825-9235P
Mfr. Part No.:: IPB027N10N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

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Subtotal (5 reels of 2 units)**. Quantities below 150 on continuous strip

PHP1,740.40

(exc. VAT)

PHP1,949.20

(inc. VAT)

4352 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

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FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit
10 - 38	PHP168.82
40 - 98	PHP163.755
100 - 198	PHP158.84
200 +	PHP154.08

**price indicative

RS Stock No.:: 825-9235P
Mfr. Part No.:: IPB027N10N3GATMA1
Manufacturer:: Infineon

IPB027N10N3 G, OptiMOS3 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS™ 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	4.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.45mm
Typical Gate Charge @ Vgs	155 nC @ 10 V
Length	10.31mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

FREE delivery for over PHP7,000.00 (ex VAT)

Infineon OptiMOS™3 Power MOSFETs, 100V and over