SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0080120D
- RS Stock No.:
- 809-8991
- Mfr. Part No.:
- C2M0080120D
- Manufacturer:
- Wolfspeed
6 In Global stock for delivery. NCR Plus within 10 working day(s), rest of PH within 14 working days
248 In Global stock for delivery. NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each
PHP1,804.66
(exc. VAT)
PHP2,021.22
(inc. VAT)
| Units | Per Unit |
| 1 - 9 | PHP1,804.66 |
| 10 - 49 | PHP1,750.53 |
| 50 - 99 | PHP1,698.03 |
| 100 - 249 | PHP1,647.09 |
| 250 + | PHP1,597.68 |
- RS Stock No.:
- 809-8991
- Mfr. Part No.:
- C2M0080120D
- Manufacturer:
- Wolfspeed
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 31 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 208 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.2V |
| Minimum Gate Threshold Voltage | 1.7V |
| Maximum Power Dissipation | 208 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -10 V, +25 V |
| Length | 16.13mm |
| Typical Gate Charge @ Vgs | 49.2 nC @ 20 V |
| Transistor Material | SiC |
| Width | 5.21mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Height | 21.1mm |
| Minimum Operating Temperature | -55 °C |