- RS Stock No.:
- 325-7625
- Mfr. Part No.:
- RFP50N06
- Manufacturer:
- onsemi
17 In Global stock for delivery. NCR Plus within 10 working day(s), rest of PH within 14 working days
425 In Global stock for delivery. NCR Plus within 10 working day(s), rest of PH within 14 working days
Price Each
PHP118.08
(exc. VAT)
PHP132.25
(inc. VAT)
units | Per Unit |
1 - 9 | PHP118.08 |
10 - 49 | PHP114.54 |
50 - 99 | PHP111.10 |
100 - 249 | PHP107.76 |
250 + | PHP104.54 |
- RS Stock No.:
- 325-7625
- Mfr. Part No.:
- RFP50N06
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 50 A |
Maximum Drain Source Voltage | 60 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 22 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 131 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Transistor Material | Si |
Width | 4.83mm |
Length | 10.67mm |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 125 nC @ 20 V |
Series | MegaFET |
Height | 9.4mm |
Minimum Operating Temperature | -55 °C |