SiC N-Channel MOSFET, 72 A, 1700 V, 3-Pin TO-247 Wolfspeed C2M0045170D
- RS Stock No.:
- 192-3486
- Mfr. Part No.:
- C2M0045170D
- Manufacturer:
- Wolfspeed
2 In Global stock for delivery. NCR Plus within 10 working day(s), rest of PH within 14 working days
3 In Global stock for delivery. NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each
PHP6,164.64
(exc. VAT)
PHP6,904.40
(inc. VAT)
| Units | Per Unit |
| 1 - 9 | PHP6,164.64 |
| 10 + | PHP6,005.20 |
- RS Stock No.:
- 192-3486
- Mfr. Part No.:
- C2M0045170D
- Manufacturer:
- Wolfspeed
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.
1700V of blocking voltage with low RDS(on)
High-speed switching with low capacitances
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
High-speed switching with low capacitances
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 72 A |
| Maximum Drain Source Voltage | 1700 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 45 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 520 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -10 V, 25 V |
| Number of Elements per Chip | 1 |
| Length | 16.13mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | SiC |
| Typical Gate Charge @ Vgs | 188 nC @ 5/20V |
| Width | 5.21mm |
| Height | 21.1mm |
| Minimum Operating Temperature | -40 °C |