N-Channel MOSFET, 15 A, 600 V, 3-Pin TO-3PF ROHM R6015ENZC8
- RS Stock No.:
- 172-0363
- Mfr. Part No.:
- R6015ENZC8
- Manufacturer:
- ROHM
Discontinued product
- RS Stock No.:
- 172-0363
- Mfr. Part No.:
- R6015ENZC8
- Manufacturer:
- ROHM
Technical data sheets
Legislation and Compliance
Product Details
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 15 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-3PF |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 560 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 120 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 5.7mm |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Length | 15.7mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.5V |
| Series | R6015ENZ |
| Height | 26.7mm |