N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STMicroelectronics STP65NF06

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 60 A
Maximum Drain Source Voltage 60 V
Package Type TO-220
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 14 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 110 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Height 15.75mm
Width 4.6mm
Series STripFET II
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 54 nC @ 10 V
Maximum Operating Temperature +175 °C
Transistor Material Si
Length 10.4mm
1900 In Global stock for delivery within 4 - 8 working days
Price Each (In a Tube of 50)
Was PHP69.605
PHP 64.344
(exc. VAT)
PHP 72.065
(inc. VAT)
units
Per Unit
Per Tube*
50 +
PHP64.344
PHP3,217.20
*price indicative
Related Products
ON Semiconductors range of P-Channel MOSFETS are produced ...
Description:
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. • ...
From driving a simple lamp to the sophisticated ...
Description:
From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems. Suitable for thermally demanding environments due to 175°C rating ...
The Infineon range of discrete HEXFET® power MOSFETs ...
Description:
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction ...
PowerTrench® MOSFETs are optimised power switches that offer ...
Description:
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC ...