N-Channel MOSFET, 12 A, 600 V, 3-Pin TO-220 STMicroelectronics STP18N60DM2

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability
AEC-Q101 qualified

MOSFET Transistors, STMicroelectronics

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 12 A
Maximum Drain Source Voltage 600 V
Package Type TO-220
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 290 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 90 W
Transistor Configuration Single
Maximum Gate Source Voltage -25 V, +25 V
Number of Elements per Chip 1
Height 15.75mm
Width 4.6mm
Series MDmesh DM2
Typical Gate Charge @ Vgs 20 nC @ 10 V
Length 10.4mm
Transistor Material Si
Maximum Operating Temperature +150 °C
Forward Diode Voltage 1.6V
Minimum Operating Temperature -55 °C
Temporarily out of stock - back order for despatch 14/05/2021, delivery within 6 working days from desptach date
Price Each (In a Tube of 50)
Was PHP103.43
PHP 85.201
(exc. VAT)
PHP 95.425
(inc. VAT)
units
Per Unit
Per Tube*
50 +
PHP85.201
PHP4,260.05
*price indicative
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