N-Channel MOSFET, 1.5 A, 18 V, 3-Pin SOT-89 STMicroelectronics PD84001

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 1.5 A
Maximum Drain Source Voltage 18 V
Package Type SOT-89
Mounting Type Surface Mount
Pin Count 3
Channel Mode Enhancement
Maximum Power Dissipation 6 W
Transistor Configuration Single
Maximum Gate Source Voltage -0.5 V, +15 V
Number of Elements per Chip 1
Width 2.6mm
Maximum Operating Temperature +150 °C
Height 1.6mm
Transistor Material Si
Length 4.6mm
2500 In Global stock for delivery within 4 - 8 working days
Price Each (On a Reel of 2500)
PHP 64.58
(exc. VAT)
PHP 72.33
(inc. VAT)
units
Per Unit
Per Reel*
2500 +
PHP64.58
PHP161,450.00
*price indicative
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The Radio Frequency Transistors are LDMOS suitable for ...
Description:
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
The Radio Frequency Transistors are LDMOS suitable for ...
Description:
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
The Radio Frequency Transistors are LDMOS suitable for ...
Description:
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
The Radio Frequency Transistors are LDMOS suitable for ...
Description:
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.