SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J

RS Stock No.:: 162-9713
Mfr. Part No.:: C3M0065090J
Manufacturer:: Wolfspeed

SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J

This image is representative of the product range

200 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days

Added

Price Each (In a Tube of 50)

PHP838.80

(exc. VAT)

PHP939.46

(inc. VAT)

Units	Per Unit	Per Tube*
50 +	PHP838.80	PHP41,940.00
*price indicative

RS Stock No.:: 162-9713
Mfr. Part No.:: C3M0065090J
Manufacturer:: Wolfspeed

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	35 A
Maximum Drain Source Voltage	900 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	78 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.1V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	113 W
Transistor Configuration	Single
Maximum Gate Source Voltage	+25 V
Number of Elements per Chip	1
Transistor Material	SiC
Width	10.99mm
Typical Gate Charge @ Vgs	30 nC @ 15 V
Length	10.23mm
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	4.4V
Minimum Operating Temperature	-55 °C
Height	4.57mm