N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB Infineon IRFB7530PBF
- RS Stock No.:
- 145-9657
- Mfr. Part No.:
- IRFB7530PBF
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 18/09/2024, delivery within 10 working days from desptach date
Added
Price Each (In a Tube of 50)
PHP114.12
(exc. VAT)
PHP127.81
(inc. VAT)
| Units | Per Unit | Per Tube* |
| 50 + | PHP114.12 | PHP5,706.00 |
| *price indicative | ||
- RS Stock No.:
- 145-9657
- Mfr. Part No.:
- IRFB7530PBF
- Manufacturer:
- Infineon
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 195 A |
| Maximum Drain Source Voltage | 60 V |
| Series | StrongIRFET |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.83mm |
| Transistor Material | Si |
| Length | 10.67mm |
| Typical Gate Charge @ Vgs | 274 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Height | 16.51mm |
| Minimum Operating Temperature | -55 °C |