N-Channel MOSFET, 198 A, 40 V DirectFET ISOMETRIC Infineon IRF7946TRPBF
- RS Stock No.:
- 130-0965
- Mfr. Part No.:
- IRF7946TRPBF
- Manufacturer:
- Infineon
68 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each (In a Pack of 2)
PHP131.04
(exc. VAT)
PHP146.76
(inc. VAT)
| Units | Per Unit | Per Pack* |
| 2 - 8 | PHP131.04 | PHP262.08 |
| 10 - 98 | PHP127.11 | PHP254.22 |
| 100 - 498 | PHP123.295 | PHP246.59 |
| 500 - 998 | PHP119.60 | PHP239.20 |
| 1000 + | PHP116.01 | PHP232.02 |
| *price indicative | ||
- RS Stock No.:
- 130-0965
- Mfr. Part No.:
- IRF7946TRPBF
- Manufacturer:
- Infineon
Legislation and Compliance
Product Details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 198 A |
| Maximum Drain Source Voltage | 40 V |
| Series | DirectFET |
| Package Type | DirectFET ISOMETRIC |
| Mounting Type | Surface Mount |
| Maximum Drain Source Resistance | 1.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.9V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 96 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Width | 5.05mm |
| Length | 6.35mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 141 nC @ 20 V |
| Height | 0.53mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |