- RS Stock No.:
- 125-3453
- Mfr. Part No.:
- C3M0065100K
- Manufacturer:
- Wolfspeed
11 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each
PHP1,120.68
(exc. VAT)
PHP1,255.16
(inc. VAT)
Units | Per Unit |
1 - 24 | PHP1,120.68 |
25 - 74 | PHP1,098.29 |
75 - 149 | PHP1,076.33 |
150 - 299 | PHP1,054.81 |
300 + | PHP1,033.71 |
- RS Stock No.:
- 125-3453
- Mfr. Part No.:
- C3M0065100K
- Manufacturer:
- Wolfspeed
Legislation and Compliance
Product Details
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Cree Inc.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 35 A |
Maximum Drain Source Voltage | 1000 V |
Package Type | TO-247-4 |
Series | C3M |
Mounting Type | Through Hole |
Pin Count | 4 |
Maximum Drain Source Resistance | 90 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 1.8V |
Maximum Power Dissipation | 113.5 W |
Maximum Gate Source Voltage | -8 V, +19 V |
Number of Elements per Chip | 1 |
Width | 5.21mm |
Typical Gate Charge @ Vgs | 35 nC @ 15 V, 35 nC @ 4 V |
Length | 16.13mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | SiC |
Height | 23.6mm |
Forward Diode Voltage | 4.8V |
Minimum Operating Temperature | -55 °C |