N-Channel MOSFET, 200 A, 60 V, 3-Pin TO-247AC Infineon IRFP3206PBF
- RS Stock No.:
- 124-9012
- Mfr. Part No.:
- IRFP3206PBF
- Manufacturer:
- Infineon
450 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each (In a Tube of 25)
PHP138.60
(exc. VAT)
PHP155.23
(inc. VAT)
| Units | Per Unit | Per Tube* |
| 25 - 25 | PHP138.60 | PHP3,465.00 |
| 50 - 100 | PHP134.442 | PHP3,361.05 |
| 125 - 225 | PHP130.409 | PHP3,260.225 |
| 250 - 475 | PHP126.497 | PHP3,162.425 |
| 500 + | PHP122.702 | PHP3,067.55 |
| *price indicative | ||
- RS Stock No.:
- 124-9012
- Mfr. Part No.:
- IRFP3206PBF
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 A |
| Maximum Drain Source Voltage | 60 V |
| Series | HEXFET |
| Package Type | TO-247AC |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 280 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 5.31mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V |
| Length | 15.87mm |
| Transistor Material | Si |
| Height | 20.7mm |
| Minimum Operating Temperature | -55 °C |