SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

RS Stock No.:: 915-8842P
Mfr. Part No.:: C3M0280090D
Manufacturer:: Wolfspeed

SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

This image is representative of the product range

670 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days

Added

Price Each (Supplied in a Tube)

PHP298.54

(exc. VAT)

PHP334.36

(inc. VAT)

Units	Per Unit
10 - 28	PHP298.54
30 - 58	PHP294.645
60 - 118	PHP290.85
120 +	PHP287.165

RS Stock No.:: 915-8842P
Mfr. Part No.:: C3M0280090D
Manufacturer:: Wolfspeed

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	900 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	360 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	54 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +18 V
Width	21.1mm
Number of Elements per Chip	1
Length	16.13mm
Maximum Operating Temperature	+150 °C
Transistor Material	SiC
Typical Gate Charge @ Vgs	9.5 nC @ 15 V
Height	5.21mm
Forward Diode Voltage	4.8V
Minimum Operating Temperature	-55 °C