STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 791-7630
- Mfr. Part No.:
- STGW30V60DF
- Manufacturer:
- STMicroelectronics
Temporarily out of stock - back order for despatch 29/05/2024, delivery within 10 working days from desptach date
Added
Price Each (In a Pack of 5)
PHP201.96
(exc. VAT)
PHP226.20
(inc. VAT)
| Units | Per Unit | Per Pack* |
| 5 - 20 | PHP201.96 | PHP1,009.80 |
| 25 - 45 | PHP195.898 | PHP979.49 |
| 50 - 245 | PHP190.024 | PHP950.12 |
| 250 - 495 | PHP184.324 | PHP921.62 |
| 500 + | PHP178.794 | PHP893.97 |
| *price indicative | ||
- RS Stock No.:
- 791-7630
- Mfr. Part No.:
- STGW30V60DF
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 258 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |