onsemi FGH40N60UFDTU IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 759-9273
- Mfr. Part No.:
- FGH40N60UFDTU
- Manufacturer:
- onsemi
1 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each
PHP208.08
(exc. VAT)
PHP233.05
(inc. VAT)
| Units | Per Unit |
| 1 - 9 | PHP208.08 |
| 10 - 49 | PHP201.83 |
| 50 - 99 | PHP195.76 |
| 100 - 249 | PHP189.90 |
| 250 + | PHP184.22 |
- RS Stock No.:
- 759-9273
- Mfr. Part No.:
- FGH40N60UFDTU
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 290 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.6 x 4.7 x 20.6mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |