Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS, Through Hole
- RS Stock No.:
- 601-2807
- Mfr. Part No.:
- GT30J322(Q)
- Manufacturer:
- Toshiba
1 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each
PHP234.75
(exc. VAT)
PHP262.92
(inc. VAT)
| Units | Per Unit |
| 1 - 19 | PHP234.75 |
| 20 - 49 | PHP230.05 |
| 50 - 99 | PHP225.44 |
| 100 - 499 | PHP220.93 |
| 500 + | PHP181.82 |
- RS Stock No.:
- 601-2807
- Mfr. Part No.:
- GT30J322(Q)
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-3PNIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 21mm |
| Maximum Operating Temperature | +150 °C |