ROHM RGT16NS65DGC9, P-Channel IGBT, 16 A 650 V, 3+Tab-Pin I2PAK, Through Hole
- RS Stock No.:
- 171-5506
- Mfr. Part No.:
- RGT16NS65DGC9
- Manufacturer:
- ROHM
Discontinued product
- RS Stock No.:
- 171-5506
- Mfr. Part No.:
- RGT16NS65DGC9
- Manufacturer:
- ROHM
Legislation and Compliance
Product Details
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 16 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | 30V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 94 W |
| Package Type | TO-262 |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 3+Tab |
| Transistor Configuration | Single |
| Dimensions | 10.1 x 4.5 x 9mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +175 °C |
| Gate Capacitance | 450pF |